I B,S = I C,I ( RA ) = (1 + β R )I B,I I B, I = I B,O (SAT ) = I E ,S(SAT ) − I RD I RD = I E ,S(SAT ) = I B,S + I C,S I OL = I C,O (SAT ) = σβ F I B,O (SAT ) VIH = VBE,O(SAT) + VBE,S(SAT) – VCE,I(SAT)ĭetermined by the output low state as QI is cut-off for high-inputs VCC − VBE ,L ( FA ) − VD ,L ( ON ) − VBE ,O (SAT )Įxample: Calculate the DTL fan-out for βF = 49 and σ = 0.85.Įxample: Calculate the average power dissipation for the above example?Īctual TTL NAND Gate with Totem Pole Output
I C ,O (SAT ) = σβ F I B,O (SAT ) For maximum fan-out σ = 1 Simplified output-high fan-out configurationĭetermined by the output low state as DI is off for high-inputs Maximum fan-out? ⎢I ⎥ N = ⎢ OUT ⎥ ⎣ I IN ⎦įan-out of RTL with Active Pull-up Determined by the output high state as QS is cut-off for low-inputs Reduced models of the operation modes βF =ĭischarge path and Base-Driving circuitry IS = α F I ES = α R I CS transport saturation current I D ,BE = I ES (e VBE / VT − 1) I D ,BC = I CS (e VBC / VT − 1) Speed-power product = (Average Power Diss) x (Propagation Delay)Įbers-Moll NPN BJT Model I E = I D ,BE − α R I D ,BC I C = α F I D ,BE − I D ,BC IB = IE − IC Logic Element Equivalent Circuit and Fan-out Rise and fall times and turn-on and turn-off times Idealized Inverter and Voltage Transfer Characteristics( VTCs) Most important elements: Inverter and Noninverter
Properties of Digital Integrated Circuits Resistor-Transistor Logic (RTL) Diode-Transistor Logic (DTL) Transistor-Transistor Logic (TTL) Schottky Transistor – Transistor Logic (STTL) Different TTL Gates Emitter-Coupled Logic (ECL) MOS Digital Circuits NMOS Gates CMOS Gates
Taub and Schilling, Digital Integrated Electronics, McGraw-Hillīasic Properties of Digital Integrated Circuits Diode Digital Circuits BJT Digital Circuits – Ebers & Moll equations – Transistor modelling – State of transistor in a circuit.DeMassa and Ciccone, Digital Integrated Circuits, John Wiley & Sons.
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